3u9vcpkpwl 星期六 10:50 · 已編輯 Lv.7 力積電 繼續閱讀 Samsung and SK hynix advance 4F² DRAM as gateway to 3D memory Samsung and SK hynix advance 4F² DRAM as gateway to 3D memory The South Korean chipmakers accelerate shift to vertical DRAM architecture The Chosun Daily 5 0P 3則留言 打賞 分享 留言 讚 取消 送出 查看 3 則留言... 留言...
